Silicon-containing antireflective coatings including non-polymeric silsesquioxanes

A lithographic structure, comprising:

• an organic antireflective layer;
• a silicon-containing antireflective layer above the organic antireflective material,
• wherein the silicon-containing antireflective layer comprises a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator;
• and
• a photoresist layer above the silicon-containing antireflective layer.

A method of forming a lithographic structure, comprising:

• depositing an organic antireflective coating above a substrate;
• depositing a silicon-containing antireflective layer above the organic antireflective material, wherein the silicon-containing antireflective layer comprises a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator;
• depositing a photoresist layer above the silicon-containing antireflective layer, wherein the photoresist layer comprises a radiation-sensitive polymer suitable for negative tone development systems;
• patternwise exposing the photoresist layer to radiation to create regions exposed to radiation and regions not exposed to radiation in the photoresist layer;
• developing the photoresist layer to form a pattern in the photoresist layer comprising the regions of the photoresist layer exposed to radiation;
• transferring the pattern of the photoresist layer into the silicon-containing antireflective layer;
• transferring the pattern of the silicon-containing antireflective layer into the organic antireflective layer;
• and
• transferring the pattern of the organic antireflective layer into the substrate.