Plasma evaluation method, plasma processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsTakayuki Karakawa, Hirokazu Ueda
Life of this patent
Estimating the term…
Abstract
Disclosed is a plasma evaluation method that evaluates plasma P that forms a nitride film by an atomic layer deposition method. First, light emission from the plasma P generated from a gas G that contains nitrogen atoms and hydrogen atoms is detected. Then, evaluation of the plasma P is performed by using a result of comparing an intensity ratio between a first peak caused by hydrogen atoms and a second peak different from the first peak and caused by hydrogen atoms in an intensity spectrum of the detected light emission with a reference value calculated in advance from a relationship between the intensity ratio and an indicator that indicates a film quality of the nitride film.
Claims8
A plasma evaluation method of evaluating plasma that forms a nitride film by an atomic layer deposition method, the plasma evaluation method comprising:
- detecting light emission from the plasma generated from a gas that contains nitrogen atoms and hydrogen atoms;
- and
- performing evaluation of the plasma by using a result of comparing an intensity ratio between a first peak caused by hydrogen atoms and a second peak different from the first peak and caused by hydrogen atoms in an intensity spectrum of the detected light emission with a reference value calculated in advance from a relationship between the intensity ratio and an indicator that indicates a film quality of the nitride film.
A plasma processing apparatus that forms a nitride film by an atomic layer deposition method, the apparatus comprising:
- a processing chamber;
- a gas supply source configured to supply a gas that contains nitrogen atoms and hydrogen atoms into the processing chamber;
- a plasma generator configured to generate plasma from the gas within the processing chamber;
- a light detector configured to detect light emission from the plasma;
- and
- a control unit that performs evaluation of the plasma by using a result of comparing an intensity ratio between a first peak caused by hydrogen atoms and a second peak different from the first peak and caused by the hydrogen atoms in an intensity spectrum of the detected light emission with a reference value calculated in advance from a relationship between the intensity ratio and an indicator that indicates a film quality of the nitride film.
Dependencies are inferred from the claim text.