Processing apparatus, ion implantation apparatus and ion implantation method

An ion implantation apparatus, comprising:

• an end station configured to support thereon a workpiece to be ion implanted;
• an ion beam generator configured to generate an ion beam toward the end station, the ion beam having a first configuration or a second configuration different from the first configuration;
• a scanning device located on a first path downstream of the ion beam generator and configured to scan the ion beam having the first configuration and transmitted along the first path in a scanning direction transverse to the first path;
• a deceleration stage located on a second path downstream of the ion beam generator and configured to decelerate the ion beam having the second configuration and transmitted along the second path, the second path partially deviated from the first path;
• and
• an output multi-pole device common to both the first path and the second path, the output multi-pole device located on the first path between the scanning device and the end station, and on the second path between the ion beam generator and the end station, the output multi-pole device configured to control uniformity of the ion beam before the ion beam reaches the workpiece supported at the end station.

An ion implantation method, the method comprising:

• generating a first ion beam or a second ion beam, the first ion beam having a different configuration from the second ion beam;
• scanning and directing the first ion beam at a workpiece to perform ion implantation on the workpiece;
• or
• directing the second ion beam at the workpiece to perform ion implantation on the workpiece;
• wherein the first ion beam and the second ion beam follow different paths.