Method for forming patterned conductive film
AssigneesJapan Science and Technology Agency, Jsr Corporation
InventorsTatsuya SHIMODA, Yasuo MATSUKI, Zhongrong SHEN
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Abstract
The present invention is directed to a method for forming a patterned conductive film, which comprises the step of bringing a substrate having a layer made of platinum microcrystal particles formed thereon in a pattern and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120° C. According to the present invention, there is provided a method for forming a patterned conductive layer, which can ensure electrical bonding with a substrate and also can be suitably applied to various electronic devices, simply without requiring a massive and heavy apparatus.
Claims4
A method for forming a patterned conductive film, the method comprising:
- bringing a substrate and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120° C.,
- wherein the substrate has a layer made of platinum microcrystal particles formed thereon in a pattern.
4-5. (canceled)
Dependencies are inferred from the claim text.