Method for processing a carrier, method for fabricating a charge storage memory cell, method for processing a chip, and method for electrically contacting a spacer structure

A method for fabricating a charge storage memory cell, the method comprising:

• forming a charge storage memory cell structure over a wafer, the charge storage memory cell structure including at least two adjacent charge storage memory cell structure elements arranged at a first distance between the same;
• depositing a spacer layer over the charge storage memory cell structure, wherein the spacer layer is deposited having a spacer layer thickness greater than half of the first distance, wherein the spacer layer comprises electrically conductive spacer material;
• partially removing the spacer layer, wherein spacer material of the spacer layer remains in at least one region between the at least two adjacent charge storage memory cell structure elements;
• and
• electrically contacting the remaining spacer material.

A method for processing a chip, the method comprising:

• forming a structure over a substrate, wherein the structure comprises at least one structure element, wherein the at least one structure element comprises at least two adjacent sidewalls facing each other arranged at a first distance between the at least two adjacent sidewalls;
• depositing a spacer layer over the structure covering the at least one structure element, wherein the spacer layer is deposited having a spacer layer thickness greater than half of the first distance between the at least two adjacent sidewalls;
• partially removing the spacer layer, wherein spacer material of the spacer layer remains in at least one region between the at least two adjacent sidewalls of the at least one structure element;
• and
• electrically contacting the remaining spacer material.

A method for electrically contacting a spacer structure, the method comprising:

• forming a structure over a carrier, the structure including at least two adjacent structure elements arranged at a first distance between the at least two adjacent structure elements;
• depositing a spacer layer over the structure covering the at least two adjacent structure elements, wherein the spacer layer is deposited having a spacer layer thickness greater than half of the first distance, wherein the spacer layer comprises electrically conductive spacer material;
• partially removing the spacer layer, wherein spacer material of the spacer layer remains in at least one region between the at least two adjacent structure elements thereby forming a spacer structure;
• and
• electrically contacting the spacer structure.