Nitride electronic device and method for manufacturing the same

A method for manufacturing a nitride electronic device, comprising:

• forming an epitaxial structure in which a low temperature buffer layer, a first semi-insulating nitride layer, a first channel layer and a first barrier layer are sequentially stacked on a substrate;
• stacking a first dielectric layer for forming a pattern on the first barrier layer and partially etching the first barrier layer, the first channel layer and the first semi-insulating nitride layer;
• regrowing a second semi-insulating nitride layer on the etched first semi-insulating nitride layer;
• sequentially stacking a second channel layer and a second barrier layer on the second semi-insulating nitride layer;
• stacking a second dielectric layer for forming a pattern on the second barrier layer and etching the second barrier layer, the second channel layer and the second semi-insulating nitride layer;
• and
• removing the first and second dielectric layers and stacking metal electrode layers on the first and second barrier layers.