Ion implantation based emitter profile engineering via process modifications

A method of creating a desired dopant profile in a workpiece, using an implant system comprising an ion source in communication with a gas source and an ionization power supply, and an extraction electrode in communication with an extraction power supply, comprising:

• introducing a first gas comprising a dopant from the gas source into the ion source;
• energizing the ion source at a first ionization voltage using the ionization power supply to create a first set of ions from the gas;
• energizing the extraction electrode at an extraction voltage using the extraction power supply so as to extract the first set of ions from the ion source and direct the ions toward the workpiece;
• implanting the first set of ions at a first depth;
• energizing the ion source at a second ionization voltage, lower than the first ionization voltage, using the ionization power supply to create a second set of ions;
• energizing the extraction electrode at an extraction voltage using the extraction power supply so as to extract the second set of ions from the ion source and direct the ions toward the workpiece;
• implanting the second set of ions at a second depth, the second depth less than the first depth;
• and
• performing a thermal cycle so as to allow the dopant to diffuse into the workpiece.

A method of creating a desired dopant profile in a workpiece, using an implant system comprising an ion source in communication with at least two gas sources and an ionization power supply, and an extraction electrode in communication with an extraction power supply, comprising:

• introducing a first gas comprising a dopant from the gas source into the ion source;
• energizing the ion source at an ionization voltage using the ionization power supply to create a first set of ions from the first gas;
• energizing the extraction electrode at an extraction voltage using the extraction power supply so as to extract the first set of ions from the ion source and direct the ions toward the workpiece;
• implanting the first set of ions at a first depth;
• introducing a second gas comprising the dopant from the gas source into the ion source;
• energizing the ion source at an ionization voltage using the ionization power supply to create a second set of ions from the second gas;
• energizing the extraction electrode at an extraction voltage using the extraction power supply so as to extract the second set of ions from the ion source and direct the ions toward the workpiece;
• implanting the second set of ions at a second depth;
• and
• performing a thermal cycle so as to allow the dopant to diffuse into the workpiece.