Method and system for image sensor and lens on a silicon back plane wafer
AssigneesSemiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
InventorsHERB HE HUANG, MIENO FUMITAKE
Life of this patent
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Abstract
A method for forming image sensors includes providing a substrate and forming a plurality of photo diode regions, each of the photo diode regions being spatially disposed on the substrate. The method also includes forming an interlayer dielectric layer overlying the plurality of photo diode regions, forming a shielding layer formed overlying the interlayer dielectric layer, and applying a silicon dioxide bearing material overlying the shielding layer. The method further includes etching portions of the silicon dioxide bearing material to form a plurality of first lens structures, and continuing to form each of the plurality of first lens structures to provide a plurality of finished lens structures.
Claims16
A method for forming image sensors, the method comprising:
- providing a substrate;
- forming a plurality of photo diode regions, each of the photo diode regions being spatially disposed on the substrate;
- forming an interlayer dielectric layer overlying the plurality of photo diode regions;
- forming a shielding layer formed overlying the interlayer dielectric layer;
- applying a silicon dioxide bearing material overlying the shielding layer;
- etching portions of the silicon dioxide bearing material to form a plurality of first lens structures;
- continuing to form each of the plurality of first lens structures to provide a plurality of finished lens structures.
Dependencies are inferred from the claim text.