Defect-controlling structure for epitaxial growth, light emitting device containing defect-controlling structure, and method of forming the same
AssigneeInvenlux Corporation
InventorsJIANPING ZHANG, HONGMEI WANG, CHUNHUI YAN
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Abstract
A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.
Claims27
1-7. (canceled)
A method for forming a light emitting device comprising:
- providing a substrate;
- epitaxially growing a defect-controlling layer over the substrate in a reactor, and introducing nanoparticles into the reactor so as to dispense the nanoparticles in-situ in the defect-controlling layer;
- and
- forming a light emitting diode structure on the defect-controlling layer, wherein the light emitting diode structure comprises an n-type layer, a p-type layer, and an active region sandwiched therebetween, and the light emitting active region comprises one or more quantum wells and one or more quantum bathers alternately arranged with said one or more quantum wells.
17-22. (canceled)
A method for forming light emitting device comprising:
- providing a substrate in a reactor;
- forming a light emitting diode structure over the substrate, wherein the light emitting diode structure comprises an n-type layer, a p-type layer, and an active region sandwiched therebetween, and the light emitting region comprises one or more quantum wells and one or more quantum bathers alternately arranged with said one or more quantum wells;
- wherein nanoparticles are introduced into the reactor while epitaxially growing at least one of said one or more quantum wells, so that the nanoparticles are incorporated in-situ in said at least one quantum well.
(canceled)
A method for forming a light emitting device comprising:
- providing a substrate in a reactor;
- forming a light emitting diode structure over the substrate, wherein the light emitting diode structure comprises an n-type layer, a p-type layer, and an active region sandwiched therebetween, and the light emitting region comprises one or more quantum wells and one or more quantum bathers alternately arranged with said one or more quantum wells;
- wherein forming the light emitting diode structure comprises:
- forming nitride nanoparticles in situ in gaseous phase in the reactor, and depositing the nitride nanoparticles on at least one of said one or more quantum bathers;
- and
- epitaxially growing at least one of said one or more quantum wells on the quantum barrier on which the nitride nanoparticles are deposited.
30-41. (canceled)
A method for forming a defect-controlling structure for a semiconductor device comprising:
- providing a substrate;
- epitaxially growing a defect-controlling layer over the substrate in a reactor, and introducing nanoparticles into the reactor so as to dispense the nanoparticles in-situ in the defect-controlling layer;
- and
- epitaxially growing an epitaxial layer on the defect-controlling layer.
Dependencies are inferred from the claim text.