Light-emitting device, display device, and method for manufacturing the same

A method for manufacturing a light-emitting device, comprising:

• forming a separation layer over a third substrate;
• forming a base insulating film over the separation layer;
• forming first and second electrodes over the base insulating film;
• forming first and second partition walls from a same layer, wherein the first partition wall covers an end portion of the first electrode and an end portion of the second electrode and the second partition wall is provided over the first electrode;
• forming a third partition wall over the second partition wall and the first electrode, so that an area of a top surface of the third partition wall is larger than an area of a bottom surface of the third partition wall;
• forming an organic EL layer over the first electrode, the first partition wall, the second partition wall, and the third partition wall;
• forming a third electrode covering the organic EL layer;
• bonding the third substrate and a second substrate with at least a sealant, the second substrate having a vapor permeability coefficient lower than or equal to 1×10−7 g/(m2·day);
• separating the third substrate at an interface between the separation layer and the base insulating film;
• and
• bonding a first substrate having flexibility to the base insulating film.

A method for manufacturing a light-emitting device, comprising:

• forming a separation layer over a third substrate;
• forming a base insulating film over the separation layer;
• forming first and second electrodes over the base insulating film;
• forming first and second partition walls from a same layer, wherein the first partition wall covers an end portion of the first electrode and an end portion of the second electrode and the second partition wall is provided over the first electrode;
• forming a third partition wall over the second partition wall and the first electrode, so that an area of a top surface of the third partition wall is larger than an area of a bottom surface of the third partition wall;
• forming an organic EL layer over the first electrode, the first partition wall, the second partition wall, and the third partition wall;
• forming a third electrode covering the organic EL layer;
• separating the third substrate at an interface between the separation layer and the base insulating film;
• bonding a first substrate having a flexibility to the base insulating film;
• and
• bonding the first substrate and a second substrate with at least a sealant, the second substrate having a vapor permeability coefficient lower than or equal to 1×10−7 g/(m2·day).

A method for manufacturing a display device, comprising:

• forming a base insulating film over a first substrate having flexibility;
• forming first and second transistors over the base insulating film;
• forming a planarization film over the first and the second transistors, wherein the planarization film includes at least a first opening that exposes an electrode of the first transistor and a second opening that exposes an electrode of the second transistor;
• forming first and second electrodes electrically connected to the electrode of the first transistor through the first opening and the electrode of the second transistor through the second opening, respectively;
• forming a first partition wall covering an end portion of the first electrode and an end portion of the second electrode;
• forming an organic EL layer over the first electrode;
• forming a third electrode having a light-transmitting property in a visible light region over the organic EL layer;
• forming a black matrix over a second substrate having a vapor permeability coefficient lower than or equal to 1×10−7 g/(m2·day);
• forming a coloring layer in at least a region over the second substrate, wherein the black matrix is not formed in the region;
• and
• bonding the first substrate and the second substrate with at least a sealant.

A method for manufacturing a display device, comprising:

• forming a separation layer over a third substrate;
• forming a base insulating film over the separation layer;
• forming first and second transistors over the base insulating film;
• forming a planarization film over the first and the second transistors, wherein the planarization film includes at least a first opening that exposes an electrode of the first transistor and a second opening that exposes an electrode of the second transistor;
• forming first and second electrodes electrically connected to the electrode of the first transistor through the first opening and the electrode of the second transistor through the second opening, respectively;
• forming a first partition wall covering an end portion of the first electrode and an end portion of the second electrode;
• forming an organic EL layer over the first electrode;
• forming a third electrode having a light-transmitting property in a visible light region over the organic EL layer;
• forming a black matrix over a second substrate having a vapor permeability coefficient lower than or equal to 1×10−7 g/(m2·day);
• forming a coloring layer in at least a region over the second substrate, wherein the black matrix is not formed in the region;
• bonding the third substrate and the second substrate with at least a sealant;
• separating the third substrate at an interface between the separation layer and the base insulating film;
• and
• bonding a first substrate having flexibility to the base insulating film.

A method for manufacturing a display device, comprising:

• forming a separation layer over a third substrate;
• forming a base insulating film over the separation layer;
• forming first and second transistors over the base insulating film;
• forming a planarization film over the first and the second transistors, wherein the planarization film includes at least a first opening that exposes an electrode of the first transistor and a second opening that exposes an electrode of the second transistor;
• forming first and second electrodes electrically connected to the electrode of the first transistor through the first opening and the electrode of the second transistor through the second opening, respectively;
• forming a first partition wall covering an end portion of the first electrode and an end portion of the second electrode;
• forming an organic EL layer over the first electrode;
• forming a third electrode having a light-transmitting property in a visible light region over the organic EL layer;
• separating the third substrate at an interface between the separation layer and the base insulating film;
• bonding a first substrate having flexibility to the base insulating film;
• forming a black matrix over a second substrate having a vapor permeability coefficient lower than or equal to 1×10−7 g/(m2·day);
• forming a coloring layer in at least a region over the second substrate, wherein the black matrix is not formed in the region;
• and
• bonding the first substrate and the second substrate with at least a sealant.