Gan type light emitting diode device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKun Yoo KO, Young June JEONG, Seung Hwan CHOI, Seong Ah JOO, Jung Kyu PARK
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Abstract
The present invention relates to a GaN type LED device and a method of manufacturing the same. More particularly, there are provided a GaN type LED device including an LED chip; and a submount eutectic-bonded with the LED chip through an adhesive layer, wherein the adhesive layer is configured by soldering a plurality of metallic layers in which a first metallic layer and a second metallic layer are sequentially stacked, and the second metallic layer is formed in a paste form. Further, the present invention provides a method of manufacturing the GaN type LED device.
Claims13
1-24. (canceled)
A method of manufacturing a GaN type LED device comprising the steps of:
- preparing an LED chip;
- forming a first metallic layer on a surface opposite to a light emitting surface of the LED chip;
- preparing a submount;
- forming a second metallic layer on one surface of the submount to be bonded to the LED chip;
- and
- eutectic-bonding the first metallic layer and the second metallic layer to each other by soldering the first metallic layer and the second metallic layer,
- wherein the second metallic layer is formed in a paste form.
Dependencies are inferred from the claim text.