Self aligned dual patterning technique enhancement with magnetic shielding
AssigneeApplied Materials, Inc.
InventorsHun Sang KIM, Sang Wook KIM, Anisul H. KHAN
Life of this patent
Estimating the term…
Abstract
Embodiments of the present disclosure generally provide apparatus and method for improving processing uniformity by reducing external magnetic noises. One embodiment of the present disclosure provides an apparatus for processing semiconductor substrates. The apparatus includes a chamber body defining a vacuum volume for processing one or more substrate therein, and a shield assembly for shielding magnetic flux from the chamber body disposed outside the chamber body, wherein the shield assembly comprises a bottom plate disposed between the chamber body and the ground to shield magnetic flux from the earth.
Claims20
An apparatus for processing semiconductor substrates, comprising:
- a chamber body defining a vacuum volume for processing one or more substrate therein;
- and
- a shield assembly for shielding magnetic flux from the chamber body disposed outside the chamber body, wherein the shield assembly comprises a bottom plate disposed between the chamber body and the ground to shield magnetic flux from the earth.
A method for processing a substrate, comprising:
- applying a shield between a processing chamber and the ground to shield the processing chamber from magnetic flux generated by the earth;
- measuring a process rate of a process recipe performed by the processing chamber;
- determining a skew in the measured process rate;
- adjusting one or more components of the processing chamber or one or more processing parameters according to the determined skew;
- and
- processing one or more substrates in the processing chamber.
A method for processing a substrate, comprising
- applying a shield around a processing chamber to shield the processing chamber from magnetic flux and measuring a processing rate of the processing chamber to obtain a skew;
- adjusting one or more components of the processing chamber or one or more processing parameters to correct the skew;
- etching a template mask disposed below a patterned mask to form both a narrow feature and a wide feature in the template mask;
- removing the patterned mask from the narrow feature while substantially retaining the patterned mask on the wide feature;
- and
- etching the template mask to thin the exposed narrow feature relative to the wide feature formed in the template mask.
Dependencies are inferred from the claim text.