Lithographic patterning process and resists to use therein
AssigneeASML Netherlands B.V.
InventorsSander Frederik Wuister, Vladimir Mihailovitch Krivtsun, Andrei Mikhailovich Yakunin
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Abstract
A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.
Claims23
A method of irradiating a resist film of a resist material with a patterned beam of EUV light having a wavelength of less than 11 nm, the resist material comprising a silicon-containing polymer and/or a compound comprising at least one element selected from the group consisting of:
- Ta, W, Re, Os, Ir, Ni, Cu and Zn.
A photolithographic patterning process, comprising:
- forming a film of a resist material on a substrate;
- irradiating the resist film with a patterned radiation beam of EUV light of a wavelength of less than 11 nm;
- and
- developing said resist film;
- wherein said resist material comprises a silicon-containing polymer and/or a compound comprising at least one element selected from the group consisting of:
- Ta, W, Re, Os, Ir, Ni, Cu and Zn.
A silicon-containing polymer comprising a monomer having the following formula:
- wherein R is a C1 to C20 alkylsilyl group or a group having the formula:
- wherein R1, R2 and R3 are each a C1 to C20 alkylsilyl group.
A method of manufacturing a device, wherein patterned device features are applied to a substrate by a sequence of lithographic and other processing steps, and wherein at least one of said lithographic steps is a photolithographic patterning process, comprising:
- forming a film of a resist material on a substrate;
- irradiating the resist film with a patterned radiation beam of EUV light of a wavelength of less than 11 nm;
- and
- developing said resist film;
- wherein said resist material comprises a silicon-containing polymer and/or a compound comprising at least one element selected from the group consisting of:
- Ta, W, Re, Os, Ir, Ni, Cu and Zn.
Use of a silicon-containing polymer or a compound comprising at least one element selected from the group consisting of:
- Ta, W, Re, Os, Ir, Ni, Cu and Zn in a resist material for an EUV lithographic process, wherein the wavelength of the EUV radiation used in said process is less than 11 nm.
Dependencies are inferred from the claim text.