Methods for plasma processing

A method for plasma-based deposition of silicon-based films on a substrate, said method comprising:

• providing a chamber, connecting it to a vacuum pump and maintaining a gas pressure of less than 2,000 Pascals in said chamber;
• positioning at least one electrode and at least one other element both with lengths that are greater than the electrode width or electrode height within said chamber, said electrode having a first side facing said element and a front side facing a support structure for said substrates;
• and
• placing said substrate on said support structure such that a side of said substrate to be coated faces said front side of said electrode, and wherein the minimum gap between said electrode and said substrate on said support is less than the electrode width;
• maintaining said substrate at a temperature under 200 degrees Celsius;
• and
• injecting a first reactant gas comprising compounds not containing silicon, which gas flows toward said substrate adjacent said first side of said electrode;
• providing AC power to said electrode to form a plasma by activating said first gas in a gap between said electrode and said element, and forming a plasma adjacent the front side of said electrode providing ion bombardment of said substrate;
• injecting a second gas into said flowing activated first gas to form a mixed gas, said second gas comprising a silicon-containing compound, and depositing a silicon-based thin film upon the substrate;
• and
• wherein said mixed gas flows adjacent said front side of said electrode without recirculation.

A method for plasma-based coating of thin films on a substrate, said method comprising:

• providing a chamber, connecting it to a vacuum pump and maintaining a gas pressure in a range of 50 Pascals to 2000 Pascals in said chamber;
• positioning a plurality of electrodes within said chamber, whose lengths are greater than their width or height, and positioning a support for substrates, with at least one said electrode having a front side opposite said support for said substrate;
• and
• placing a substrate on said support such that a side of said substrate to be coated faces at least one said electrode, and where the minimum gap between said electrode and said substrate is less than the electrode width;
• and
• maintaining the part of said substrate adjacent said pedestal at a temperature less than 200° C.;
• and
• injecting a first gas into the space between opposing faces of said electrodes to flow towards said substrate;
• providing AC power to at least one of said electrodes to form a plasma between said electrode and substrate providing ion bombardment of said substrate;
• injecting a second gas from at least one said electrode into said flowing first gas to form a mixed gas;
• wherein said mixed gas deposits a thin film on said substrate;
• and
• flows adjacent said front side of at least one said electrode without recirculation.