Common deposition platform, processing station, and method of operation thereof

A method of depositing at least two layers on a substrate with a first deposition source and at least one second deposition source, comprising:

• guiding the substrate over a substrate support along a surface;
• providing a separation gas at at least two positions at opposing sides of at least the first deposition source;
• providing a process gas and exhausting the process gas between the at least two positions;
• and
• pumping at at least one vacuum outlet between the first deposition source and the at least one second deposition source.

An apparatus for depositing a thin film on a substrate, comprising:

• a substrate support having an outer surface for guiding the substrate along a surface of the substrate support through a first vacuum processing region and at least one second vacuum processing region;
• a first deposition station corresponding to the first processing region and at least one second deposition source corresponding to the at least one second vacuum processing region, wherein at least the first deposition station comprises:
• an electrode having a surface, wherein the surface of the electrode opposes the surface of the substrate support;
• a processing gas inlet and a processing gas outlet, wherein the processing gas inlet and the processing gas outlet are arranged at opposing sides of the surface of the electrode;
• a first separation wall surround the surface of the electrode and the processing gas inlet and processing gas outlet;
• at least one separation gas inlet surrounding the first separation wall;
• and
• at least a second separation wall surround the at least one separation gas inlet;
• the apparatus further comprising:
• one or more vacuum flanges providing at least a further gas outlet between the first deposition station and the at least one second deposition source.