Semiconductor apparatus including an optical device and an electronic device, and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKwan-Sik CHO, Jung-Hye KIM, Yong-Hwack SHIN
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Abstract
A method of manufacturing a semiconductor apparatus includes forming a gate structure and an etch stop layer structure on a substrate including first and second regions. The gate structure is formed in the first region, and the etch stop layer structure is formed in the second region. A first insulating interlayer is formed on the substrate to cover the gate structure and the etch stop layer structure. The first insulating interlayer is partially removed to expose the etch stop layer structure. The exposed etch stop layer is removed to expose the substrate. An optical device is formed on the exposed substrate.
Claims20
A method of manufacturing a semiconductor apparatus, the method comprising:
- forming a gate structure and an etch stop layer structure on a substrate including first and second regions, the gate structure being formed in the first region, and the etch stop layer structure being formed in the second region;
- forming a first insulating interlayer on the substrate to cover the gate structure and the etch stop layer structure;
- partially removing the first insulating interlayer to expose the etch stop layer structure;
- removing the exposed etch stop layer to expose the substrate;
- and
- forming an optical device on the exposed substrate.
A semiconductor apparatus, comprising:
- a gate structure including a gate insulation layer pattern, a gate electrode and a mask sequentially stacked on a substrate including an electronic device region and an optical device region, the gate structure being in the electronic device region;
- an optical device on the substrate in the optical device region;
- and
- an insulation layer pattern and an etch stop layer pattern sequentially stacked on the substrate adjacent to and spaced apart from the optical device,
- wherein the gate insulation layer pattern and the insulation layer pattern include substantially the same material, and the gate electrode and the etch stop layer pattern includes substantially the same material.
A semiconductor apparatus, comprising:
- a substrate having at least a first region and a second region;
- an electrical device disposed in the first region;
- an optical device disposed in the second region;
- and
- an etch stop layer structure disposed in the second region apart from the optical device.
Dependencies are inferred from the claim text.