TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES

A method for fabricating a laser device, comprising:

• growing a semipolar III-nitride film including a light emitting laser device structure, wherein:
• the light emitting laser device structure includes one or more semipolar III-nitride active layers grown on or above a surface of a nitride substrate, and
• the semipolar III-nitride active layers have one or more material properties such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current;
• and
• forming an edge on the laser device structure for emission of electromagnetic radiation.

A light emitting device configured as a laser device, comprising:

• a semipolar III-nitride film including a light emitting device structure, wherein:
• the light emitting device structure includes one or more semipolar III-nitride active layers grown on or above a surface of a substrate,
• one or more material properties of the active layers are such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current, and
• a semipolar orientation and the one or more material properties of the semipolar III-nitride active layers are such that the light emitting device structure has a peak External Quantum Efficiency (EQE) at a current density;
• and
• an edge configured on the light emitting device structure for emission of electromagnetic radiation.