Semiconductor memory device and method of operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJang-Woo RYU, Young-Dae LEE
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Abstract
A method of operating a semiconductor memory device is disclosed. The method may include receiving an access command, applying a first voltage to a selected word line of the semiconductor memory device for a period of time in response to receiving the access command, applying a second voltage to word lines adjacent to the selected word line before and after the period of time, and applying a third voltage to the word lines adjacent to the selected word line for the period of time, a voltage level of the third voltage greater than the second voltage. The applying the third voltage may occur when the semiconductor memory device is operated at a temperature below the predetermined temperature.
Claims20
A method of operating a semiconductor memory device, the method comprising:
- receiving an access command;
- applying a first voltage to a selected word line of the semiconductor memory device for a period of time in response to receiving the access command;
- applying a second voltage to unselected word lines adjacent to the selected word line before and after the period of time;
- and
- applying a third voltage to the unselected word lines adjacent to the selected word line for the period of time, a voltage level of the third voltage greater than the second voltage,
- wherein applying the third voltage occurs when the semiconductor memory device is operated at a temperature below the predetermined temperature.
A semiconductor memory device comprising:
- a memory cell array including a plurality of memory cells connected to word lines;
- a voltage generator configured to generate a first voltage and a second voltage having a level higher than the first voltage, a level of the first voltage being a negative voltage lower than a ground voltage;
- and
- a control circuit configured to control applying the first voltage to word lines adjacent to a selected word line of the memory cell array before and after a period of time, and applying the second voltage to the word lines adjacent to the selected word line for the period of time,
- wherein applying the second voltage occurs in response to receiving an access command.
A method of operating a semiconductor memory device including a memory cell array, the method comprising:
- applying a first voltage to a selected word line of the memory cell array for a period of time in response to receiving an access command;
- applying a second voltage to one or more word lines adjacent to the selected word line, a level of the second voltage less than the first voltage;
- and
- for the period of time, switching the second voltage to a third voltage and applying the third voltage to the one or more word lines adjacent to the selected word line, a level of the third voltage greater than the second voltage and less than the first voltage,
- wherein switching the second voltage to the third voltage occurs when the semiconductor memory device is operated at a temperature below the predetermined temperature.
Dependencies are inferred from the claim text.