Hot carrier generation and programming in nand flash
AssigneeMacronix International Co., Ltd.
InventorsKuo-Pin Chang, Wen-Wei Yeh, Chih-Shen Chang, Hang-Ting Lue
Life of this patent
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Abstract
A memory device is described that includes a three-dimensional array of memory cells having a plurality of levels of memory cells accessed by a plurality of word lines, and a plurality of bit lines. Control circuitry is coupled to the plurality of word lines and the plurality of bit lines. The control circuitry is adapted for programming a selected memory cell in a selected level of the array and on a selected word line, by hot carrier generation assisted FN tunneling, while inhibiting disturb in unselected memory cells in unselected levels and in the selected level and on unselected word lines by self-boosting.
Claims25
A memory comprising:
- a three-dimensional array of memory cells having a plurality of levels of memory cells;
- a plurality of word lines, and a plurality of bit lines;
- and
- control circuitry coupled to the plurality of word lines and the plurality of bit lines, adapted for programming a selected memory cell in a selected level of the array and on a selected word line, by hot carrier generation assisted FN tunneling, while inhibiting disturb in unselected memory cells in unselected levels and in the selected level and on unselected word lines by self-boosting.
A method comprising:
- programming a selected memory cell in a selected level of a three-dimensional array of memory cells and on a selected word line, by hot carrier generation assisted FN tunneling, while inhibiting disturb in unselected memory cells in unselected levels and in the selected level and on unselected word lines by self-boosting.
A memory comprising:
- a three-dimensional array of memory cells having a plurality of levels of memory cells;
- a plurality of word lines, and a plurality of bit lines;
- and
- control circuitry coupled to the plurality of word lines and the plurality of bit lines, adapted for programming a selected memory cell in a selected level of the array and on a selected word line, by hot carrier generation assisted FN tunneling, while applying a program disturb relief voltage to a program disturb relief word line adjacent to:
- (i) the selected word line, and (ii) a switching word line.
Dependencies are inferred from the claim text.