Programming a split gate bit cell

A split gate memory, comprising:

• a first sector of split gate memory cells arranged in rows and columns, wherein each split gate memory cell has a control gate, a select gate coupled to a word line along one of the rows, a drain terminal coupled to a bit line along one of the columns, and a source terminal;
• and
• programming circuitry for programming by which:
• for a split gate memory cell selected for programming by being coupled to a selected row and a selected column, coupling the control gate to a first voltage, coupling the select gate to a second voltage;
• coupling the drain terminal to a current sink that causes the split gate memory cell to be conductive, and coupling the source terminal to a third voltage, and
• for split gate memory cells not being programmed by being coupled to a deselected row, coupling the control gate to the first voltage, coupling the select gate to a fourth voltage which is greater than a voltage applied, during a read, to the select gates of the split gate memory cells that are deselected.

A method for selectively programming a split gate memory, comprising:

• providing a first sector of split gate memory cells arranged in rows and columns, wherein each split gate memory cell has a control gate, a select gate coupled to a word line along one of the rows, a drain terminal coupled to a bit line along one of the columns, and a source terminal;
• selecting a column and a row to identify a selected split gate memory cell to be programmed and to identify deselected split gate memory cells not on both a selected row and selected column,
• to the selected split gate memory cell, coupling a first voltage to the control gate, coupling a second voltage to the select gate, coupling a current sink to the drain terminal, and coupling a third voltage to the source terminal;
• and
• to each of the deselected split gate memory cells not on a selected row, coupling a fourth voltage to the select gate, wherein the fourth voltage is greater than ground and less than the second voltage.