Voltage assisted stt-mram writing scheme
AssigneeSamsung Electronics Co., Ltd.
InventorsAdrian E. Ong, Vladimir Nikitin, Mohamad Towfik Krounbi
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Abstract
An embodiment includes a three terminal magnetic element for a semiconductor memory device. The magnetic element includes a reference layer; a free layer; a barrier layer disposed between the reference layer and the free layer; a first electrode; an insulating layer disposed between the electrode and the free layer; and a second electrode coupled to sidewalls of the free layer.
Claims38
A magnetic element for a semiconductor device, comprising:
- a reference layer;
- a free layer;
- a barrier layer disposed between the reference layer and the free layer;
- a first electrode;
- an insulating layer disposed between the electrode and the free layer;
- and
- a second electrode coupled to sidewalls of the free layer.
A memory cell for a semiconductor device, comprising:
- a magnetic element including:
- a free layer;
- a first electrode coupled to sidewalls of the free layer;
- a second electrode;
- and
- a third electrode where the first electrode is substantially insulated from the third electrode;
- a bit line coupled to the first electrode;
- a source line coupled to the second electrode;
- and
- a voltage line coupled to the third electrode.
A method of writing data to a semiconductor device, comprising:
- applying a voltage between a voltage line and a bit line of a magnetic memory cell;
- and
- applying a voltage between a source line of the magnetic memory cell and the bit line.
A method of reading data from a semiconductor device, comprising:
- precharging a voltage line and a bit line associated with a memory cell to corresponding precharge voltages;
- applying a voltage between a source line associated with the memory cell and the bit line;
- and
- sensing a current through the memory cell.
A method, comprising:
- sequentially forming a magnetic element including a free layer, a first insulating layer, and a first electrode;
- forming a second insulating layer on side surfaces of the first electrode;
- and
- forming a second electrode coupled to the free layer after forming the second insulating layer on the side surfaces of the first electrode.
A magnetic element for a semiconductor device, comprising:
- a reference layer;
- a free layer;
- a barrier layer disposed between the reference layer and the free layer;
- an insulating layer disposed on the free layer;
- and
- an electrode disposed on the insulating layer.
Dependencies are inferred from the claim text.