Memory device using spin hall effect and methods of manufacturing and operating the memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsUng-hwan PI, Kwang-seok KIM, Kee-won KIM, Sung-chul LEE, Young-man JANG
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Abstract
A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.
Claims18
A memory device using a spin hall effect, comprising:
- a bit line;
- a word line intersecting the bit line;
- and
- a magnetic tunnel junction (MTJ) cell between the word line and the bit line such that the MTJ cell is in a region where the bit line intersects the word line,
- wherein the bit line includes a material layer applying a spin current to the MTJ cell.
A method of operating a memory device using a spin hall effect, comprising:
- writing data in a magnetic tunnel junction (MTJ) cell of the memory device by,
- applying a write current to a bit line of the memory device, and
- generating a magnetic field around a word line of the memory device,
- wherein the word line intersects the bit line,
- the MTJ cell is between the word line and the bit line such that the MTJ cell is in a region where the bit line intersects the word line, and
- the bit line includes a material layer applying a spin current to the MTJ cell.
A method of operating a memory device using a spin hall effect, comprising:
- reading data in the magnetic tunnel junction (MTJ) cell by,
- forming a potential difference between a first bit line and a word line of the memory device,
- measuring current passing through the MTJ cell, and
- comparing the measured current and a reference value,
- wherein the first bit line includes a material layer applying a spin current to the MTJ cell,
- the word line intersects the first bit line, and
- the MTJ cell is between the word line and the first bit line in a region where the first bit line intersects the word line.
A method of operating a memory device, comprising:
- applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line,
- wherein the bit line is electrically connected to a word line via the MTJ cell, and
- the word line intersects the bit line.
Dependencies are inferred from the claim text.