Read circuit for memory
AssigneesHeadway Technologies, Inc., International Business Machines Corporation
InventorsJonathan Z. Sun, John K. DeBrosse, Po-Kang Wang
Life of this patent
Estimating the term…
Abstract
Embodiments are directed to detecting a state of a memory element in a memory device, comprising: applying a pulse of a predetermined magnitude and duration to the memory element to induce a transition in the state of the memory element when a polarity of the pulse is opposite to the state, monitoring, by a device, a signal associated with the memory element to detect a presence or absence of a transition in the signal in an amount greater than a threshold, and determining the state of the memory element based on said monitoring.
Claims27
A method for detecting a state of a memory element in a memory device, comprising:
- applying a pulse of a predetermined magnitude and duration to the memory element to induce a transition in the state of the memory element when a polarity of the pulse is opposite to the state;
- monitoring, by a device, a signal associated with the memory element to detect a presence or absence of a transition in the signal in an amount greater than a threshold;
- and
- determining the state of the memory element based on said monitoring.
A non-transitory computer program product comprising a computer readable storage medium having computer readable program code stored thereon that, when executed by a computer, performs a method for detecting a state of a memory element in a memory device, the method comprising:
- applying a pulse of a predetermined magnitude and duration to the memory element to induce a transition in the state of the memory element when a polarity of the pulse is opposite to the state;
- monitoring a signal associated with the memory element to detect a presence or absence of a transition in the signal in an amount greater than a threshold;
- and
- determining the state of the memory element based on said monitoring.
A system for detecting a state of a memory element in a memory device comprising:
- a source configured to generate and apply a pulse of a predetermined magnitude and duration to the memory element to induce a transition in the state of the memory element when a polarity of the pulse is opposite to the state;
- a device configured to monitor a signal associated with the memory element to detect a presence or absence of a transition in the signal in an amount greater than a threshold;
- and
- the device is configured to determine the state of the memory element based on the monitoring of the signal.
A method for detecting a state of a memory element in a memory device, comprising:
- applying a pulse of a predetermined magnitude and duration to the memory element to induce a transition in the state of the memory element when a polarity of the pulse is opposite to the state;
- monitoring, by a device, a signal associated with the memory element to detect a presence or absence of a transition in the signal in an amount greater than a threshold;
- and
- determining the state of the memory element based on said monitoring.
Dependencies are inferred from the claim text.