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AssigneeIndustry-Academic Cooperation Foundation, Yonsei University
InventorsSeong-Ook Jung, Younghwi Yang, Bin Yang, Zhongze Wang, Choh fei Yeap
Estimating the term…
Static random access memories (SRAM) with read-preferred cell structures and write drivers are disclosed. In one embodiment, the SRAM has a six transistor bit cell. The read-preferred bit cell is implemented by providing two inverters, each having a pull up transistor, a pull down transistor and a pass gate transistor. Each pull up transistor is associated with a feedback loop. The feedback loop improves random static noise margin. Each transistor has a width and a length. The lengths of the pass gate transistors are increased. The widths of the pull down transistors are equal to one another and also equal to the widths of the pass gate transistors. The widths of the pass gate and pull down transistors may also be increased relative to prior designs. A write assist circuit may also be used to improve performance.
A static random access memory (SRAM) comprising:
A static random access memory (SRAM) comprising:
A method of forming a static random access memory (SRAM) comprising:
A static random access memory (SRAM) comprising:
A static random access memory (SRAM) comprising:
Dependencies are inferred from the claim text.