Read measurement of a plurality of resistive memory cells
AssigneeInternational Business Machines Corporation
InventorsABU SEBASTIAN, Nikolaos Papandreou, Charalampos Pozidis
Life of this patent
Estimating the term…
Abstract
A method for read measurement of a plurality N of resistive memory cells having a plurality M of programmable levels is suggested. The method includes a step of reading back from a number of reference cells to obtain a reading back parameter, a step of determining an actual read voltage for the N memory cells based on the obtained reading back parameter for obtaining a target read current at a following read measurement, and, a step of applying the determined actual read voltage to the N memory cells at the following read measurement.
Claims14
A method for read measurement of a plurality N of resistive memory cells having a plurality M of programmable levels, the method comprising:
- reading back from a number of reference cells to obtain a reading back parameter,
- determining an actual read voltage for the N memory cells based on the obtained reading back parameter for obtaining a target read current at a following read measurement, and
- at the following read measurement, applying the determined actual read voltage to the N memory cells.
An apparatus for read measurement of a plurality N of resistive memory cells having a plurality M of programmable levels, the apparatus comprising:
- a measurement circuit for reading back from a number of reference cells to obtain a reading back parameter,
- a controller for determining an actual read voltage for the N memory cells based on the obtained reading back parameter for obtaining a target read current at a following read measurement, and
- a voltage generator which is configured to apply the determined actual read voltage to the N memory cells at the following read measurement.
A resistive memory device comprising:
- a memory including a plurality N of resistive memory cells having a plurality M of programmable levels, and
- a read/write apparatus for reading and writing data in the resistive memory cells, wherein the read/write apparatus includes an apparatus for read measurement of a plurality N of resistive memory cells having a plurality M of programmable levels, the apparatus comprising:
- a measurement circuit for reading back from a number of reference cells to obtain a reading back parameter,
- a controller for determining an actual read voltage for the N memory cells based on the obtained reading back parameter for obtaining a target read current at a following read measurement, and
- a voltage generator which is configured to apply the determined actual read voltage to the N memory cells at the following read measurement.
Dependencies are inferred from the claim text.