Method and apparatus for read measurement of a plurality of resistive memory cells

An apparatus for read measurement of a plurality N of resistive memory cells having a plurality K of programmable levels, the apparatus comprising:

• a voltage generator for applying a voltage to the plurality N of resistive memory cells;
• a measurement circuit for making a measurement indicative of cell current;
• a controller for controlling operation;
• wherein the voltage generator applies a first read voltage to the plurality N of resistive memory cells;
• wherein the measurement circuit measures a first read current due to the first read voltage;
• wherein the controller determines a second read voltage for the plurality N of resistive memory cells based on the first read current and a target read current determined for the plurality N of resistive memory cells;
• and
• wherein the voltage generator applies the second read voltage to the plurality N of resistive memory cells for obtaining a second read current for the plurality N of resistive memory cells.

A resistive memory device comprising:

• a memory including a plurality N of resistive memory cells having a plurality K of programmable levels;
• a voltage generator for applying a voltage to the plurality N of resistive memory cells;
• a measurement circuit for making a measurement indicative of cell current;
• a controller for controlling operation;
• wherein the voltage generator applies a first read voltage to the plurality N of resistive memory cells;
• wherein the measurement circuit measures a first read current due to the first read voltage;
• wherein the controller determines a second read voltage for the plurality N of resistive memory cells based on the first read current and a target read current determined for the plurality N of resistive memory cells;
• and
• wherein the voltage generator applies the second read voltage to the plurality N of resistive memory cells for obtaining a second read current for the plurality N of resistive memory cells.