Resistive memory device comprising selectively disabled write driver
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Yeon Lee, Yeong-Taek Lee
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device comprises a resistive memory cell, a write driver configured to write data to the resistive memory cell during a write period comprising a plurality of loops, and a sense amplifier configured to verify whether the data is correctly written to the resistive memory cell in each of the loops. Where the sense amplifier verifies that the data is correctly written in a k-th loop among the loops, the write driver is disabled from a (k+1)-th loop to an end of the write period.
Claims20
A nonvolatile memory device comprising:
- a resistive memory cell;
- a write driver configured to write data to the resistive memory cell during a write period comprising a plurality of loops;
- and
- a sense amplifier configured to verify whether the data is correctly written to the resistive memory cell in each of the loops,
- wherein, where the sense amplifier verifies that the data is correctly written in a k-th loop among the loops, the write driver is disabled from a (k+1)-th loop to an end of the write period.
A nonvolatile memory device comprising:
- first through n-th resistive memory cells;
- and
- first through n-th write/verify units corresponding to the first through n-th resistive memory cells, respectively,
- wherein an m-th write/verify unit (1≦m≦n) comprises an m-th write driver, an m-th sense amplifier and an m-th enable latch, wherein the m-th write driver executes a write operation during a write period in response to a corresponding write enable signal, the m-th sense amplifier verifies whether the write operation was executed correctly, and the m-th enable latch provides the corresponding write enable signal, wherein where the m-th sense amplifier determines that the write operation is executed correctly, the m-th enable latch disables the m-th write driver until the write period ends by transitioning the corresponding write enable signal.
A method of operating a nonvolatile memory device comprising a resistive memory cell, a write driver, and a sense amplifier, the method comprising:
- operating the write driver to write data to the resistive memory cell during a write period comprising a plurality of loops;
- operating the sense amplifier to verify whether the data is correctly written to the resistive memory cell in each of the loops;
- and
- upon verifying that the data is correctly written in a k-th loop among the loops, disabling the write driver from a (k+1)-th loop to an end of the write period.
Dependencies are inferred from the claim text.