Back to results
US 2014/0211534 A1Published application
Locally active memristive device
AssigneeHewlett-Parkard Development Company, L.P.
InventorsMatthew D. Pickett, R. Stanley Williams
Life of this patent
Estimating the term…
Abstract
A method to operate an integrated circuit includes operating a locally active memristive device in a locally reactive region of an operating domain where the device exhibits inductor-like behavior, such as a phase shift where a voltage across the device leads a current through the device.
Claims17
1:
- An integrated circuit, comprising:
- a substrate;
- semiconductor devices over the substrate, the semiconductor devices including a locally active memristive device operated in a locally reactive domain to exhibit inductor-like behavior.
2:
- The integrated circuit of claim 1, wherein the inductor-like behavior comprises a phase shift where a voltage across the locally active memristive device leads a current through the locally active memristive device.
3:
- The integrated circuit of claim 1, wherein the locally active memristive device comprises a negative differential resistance device having an S-shaped current-voltage curve.
4:
- The integrated circuit of claim 3, wherein the semiconductor devices include other electronic components comprising a circuit to excite the locally active memristive device with a periodic input signal, the periodic input signal comprising a period and a magnitude based on switching times and switching currents of the locally active memristive device, respectively.
5:
- The integrated circuit of claim 4, wherein:
- the periodic input signal comprises a current signal;
- the magnitude is within ±10% of a range between a first switching current and a second switching current;
- and
- the period is within a factor of five of a sum of the switching times.
2 more elements
6:
- The integrated circuit of claim 4, wherein:
- the periodic input signal comprises a voltage signal;
- the magnitude creates a current through the locally active memristive device having another magnitude within ±10% of a range between a first switching current and a second switching current;
- and
- the period is within a factor of five of a sum of the switching times.
2 more elements
7:
- The integrated circuit of claim 1, wherein the locally active memristive device comprises a two-terminal metal-insulator-metal device including an insulator comprising a transition metal oxide that exhibits a temperature-driven insulator-to-metal phase transition.
8:
- The integrated circuit of claim 7, wherein the semiconductor devices include other electronic components comprising a circuit to excite the locally active memristive device with an input signal, the input signal comprising an offset to main the locally active memristive device at the edge of a low resistance state.
9:
- The integrated circuit of claim 1, wherein the semiconductor devices comprise a filter, an impedance matching network, a phase shifter, or an antenna.
10:
- A method to operate an integrated circuit including a locally active memristive device, comprising:
- operating the locally active memristive device in a locally reactive region of an operating domain where the locally active memristive device exhibits inductor-like behavior.
11:
- The method of claim 10, wherein the inductor-like behavior comprises a phase shift where a voltage across the locally active memristive device leads a current through the locally active memristive device.
12:
- The method of claim 10, wherein the locally active memristive device comprises a negative differential resistance device having an S-shaped current-voltage curve.
13:
- The method of claim 12, wherein operating comprises generating a periodic input signal comprising a period and a magnitude based on switching times and switching currents of the locally active memristive device, respectively.
14:
- The method of claim 13, wherein:
- the periodic input signal comprises a current signal;
- the magnitude is within ±10% of a range between a first switching current and a second switching current;
- and
- the period is within a factor of five of a sum of the switching times.
2 more elements
15:
- The method of claim 13, wherein:
- the periodic input signal comprises a voltage signal;
- the magnitude creates a current through the locally active memristive device having another magnitude within ±10% of a range between a first switching current and a second switching current;
- and
- the period is within a factor of five of a sum of the switching times.
2 more elements
16:
- The method of claim 10, wherein the locally active memristive device comprises a two-terminal metal-insulator-metal device including an insulator comprising a transition metal oxide that exhibits a temperature-driven insulator-to-metal phase transition.
17:
- The method of claim 16, wherein operating comprises generating an input signal comprising an offset to maintain the locally active memristive device at the edge of a low resistance state.