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US 2014/0211334 A1Published application
Pattern forming method, method for manufacturing color filter, and color filter manufactured thereby
AssigneeFUJIFILM Corporation
InventorsMitsuji YOSHIBAYASHI, Yasuo SUGISHIMA
Life of this patent
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Abstract
There is provided a pattern forming method, including: forming an organic film layer on a substrate; forming a patterned photoresist mask on the organic film layer; and performing a specific dry etching process to form a pattern on the organic layer.
Claims11
A pattern forming method, comprising:
- forming an organic film layer on a substrate;
- forming a patterned photoresist mask on the organic film layer;
- and
- performing a dry etching process to form a pattern on the organic layer,
- wherein the dry etching process includes:
- (1) a first dry etching using a first mixed gas containing oxygen and a halogen compound gas to partially remove the organic film layer so that the surface of the substrate is not exposed, and to form a removed portion in the organic film layer according to a shape of the patterned photoresist mask;
- and
- (2) after the first dry etching step, a second dry etching using a second mixed gas containing:
- oxygen;
- a halogen compound gas of which gas flow rate ratio to oxygen is lower as compared with the gas flow rate ratio of the halogen compound in the first dry etching step;
- and at least one type of a third gas selected from the group consisting of H2, N2, CH4 and CO, at a pressure of 8.0 Pa or less, so that the substrate under the organic film layer is exposed, and
- the flow rate of the halogen compound gas in the second dry etching is less than 1.0% of a total gas flow rate of the second mixed gas.
9 more elements
A method for manufacturing a color filter, comprising:
- forming an organic film layer on a substrate;
- forming a patterned photoresist mask on the organic film layer;
- and
- performing a dry etching process to form a pattern on the organic layer,
- wherein the dry etching process includes:
- (1) a first dry etching using a first mixed gas containing oxygen and a halogen compound gas to partially remove the organic film layer so that the surface of the substrate is not exposed, and to form a removed portion in the organic film layer according to a shape of the patterned photoresist mask;
- and
- (2) after the first dry etching step, a second dry etching using a second mixed gas containing:
- oxygen;
- a halogen compound gas of which gas flow rate ratio to oxygen is lower as compared with the gas flow rate ratio of the halogen compound in the first dry etching step;
- and at least one type of a third gas selected from the group consisting of H2, N2, CH4 and CO, at a pressure of 8.0 Pa or less, so that the substrate under the organic film layer is exposed, and
- the flow rate of the halogen compound gas in the second dry etching is less than 1.0% of a total gas flow rate of the second mixed gas.
9 more elements
Dependencies are inferred from the claim text.