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US 2014/0211179 A1Published application
Euv mirror comprising an oxynitride capping layer having a stable composition, euv lithography apparatus, and operating method
AssigneeCarl Zeiss SMT GmbH
InventorsGisela von BLANCKENHAGEN, Dirk Heinrich EHM
Life of this patent
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Abstract
A mirror (13) for use e.g. in an EUV lithography apparatus or an EUV mask metrology system, with: a substrate (15) and a coating (16) reflective to EUV radiation (6), the reflective coating having a capping layer (18) composed of an oxynitride, in particular composed of SiNxOY, wherein a nitrogen proportion x in the oxynitride NxOY is between 0.4 and 1.4. Also provided are an EUV lithography apparatus having at least one such EUV mirror (13) and a method for operating such an EUV lithography apparatus.
Claims15
A mirror, comprising:
- a substrate and a coating reflective to extreme-ultraviolet (EUV) radiation wherein the reflective coating comprises a capping layer composed of an oxynitride, wherein a nitrogen proportion x in the oxynitride NxOY is between 0.4 and 1.4.
Dependencies are inferred from the claim text.