Method for producing a capping layer composed of silicon oxide on an euv mirror, euv mirror, and euv lithography apparatus
AssigneeCarl Zeiss SMT GmbH
InventorsDirk Heinrich EHM, Gisela von BLANCKENHAGEN
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Abstract
A method for producing a capping layer (18) composed of silicon oxide SiOx on a coating (16) of a mirror (13), the coating reflecting EUV radiation (6) e.g. for use in an EUV lithography apparatus or in an EUV mask metrology system. The method includes irradiating a capping layer (18) composed of silicon nitride SiNx or composed of silicon oxynitride SiNxOy for converting the silicon nitride SiNx or the silicon oxynitride SiNxOy of the capping layer (18) into silicon oxide SiOx. An associated mirror (13) includes a capping layer comprised of silicon oxide SiOx, and can be provided in an associated EUV lithography apparatus.
Claims17
A method for producing a capping layer composed of silicon oxide SiOx on a coating of a mirror, said coating reflecting extreme-ultraviolet (EUV) radiation, comprising:
- irradiating a capping layer composed of silicon nitride SiNx or composed of silicon oxynitride SiNxOy for converting the silicon nitride SiNx or the silicon oxynitride SiNxOy of the capping layer into silicon oxide SiOx.
Dependencies are inferred from the claim text.