Wdr pixel array, wdr imaging apparatus including the same and method for operating the same
AssigneeLG Innotek Co., Ltd.
InventorWoon Il Choi
Life of this patent
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Abstract
Disclosed is a WDR pixel array having high sensitivity under the middle intensity of illumination and high intensity of illumination by using the 4T pixel structure representing high sensitivity under the low intensity of illumination. According to the embodiment, the overflow charges generated under the very high intensity of illumination are not discarded or partially stored, but read through the 3T pixel operation, so that the WDR pixel array having high sensitivity under the middle intensity of illumination and high intensity of illumination can be obtained based on the 4T pixel structure without additionally providing a transistor or a photodiode for the high intensity of illumination in the WDR pixel array.
Claims11
1-3. (canceled)
An imaging apparatus comprising:
- a photo-electro conversion unit on a substrate;
- a transfer switching unit on the substrate at one side of the photo-electro conversion unit;
- a storage region on the substrate at one side of the transfer switching unit;
- a plurality of pixels including a reset switching unit on the substrate at one side of the storage region;
- and
- a control circuit reading a signal level and a reset signal level and applying a signal to the transfer switching unit and the reset switching unit,
- wherein the control circuit reads an overflow signal level of the photo-electro conversion unit.
Dependencies are inferred from the claim text.