Inspection method for semiconductor light-emitting device and manufacturing method for semiconductor light-emitting device

An inspection method for a semiconductor light-emitting device having an active layer, comprising:

• an image input step for irradiating light of a shorter wavelength than light emitted from the active layer to the semiconductor light-emitting device and inputting a captured image of photoluminescence emitted from the active layer;
• an inspection region extracting step for extracting a region of the semiconductor light-emitting device based on the captured image, as an inspection region;
• a photoluminescence intensity average determination step for calculating an average value of the photoluminescence intensity over the pixels in the inspection region and determining the semiconductor light-emitting device as defective when the average value is smaller than a predetermined first threshold;
• and
• a photoluminescence intensity variation determination step for calculating a variation value indicating a degree of variation of the photoluminescence intensity over the pixels in the inspection region and determining the semiconductor light-emitting device as defective when the variation value is larger than a predetermined second threshold, wherein
• upon obtaining defective determination in at least one of the photoluminescence intensity average determination step and the photoluminescence intensity variation determination step, determine the semiconductor light-emitting device is defective.