Method to form finfet/trigate devices on bulk semiconductor wafers
AssigneesInternational Business Machines Corporation, STMicroelectronics S.r.l.
InventorsQing Liu, Junli Wang
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Abstract
A method for fabricating a finFET device having an insulating layer that insulates the fin from a substrate is described. The insulating layer can prevent leakage current that would otherwise flow through bulk semiconductor material in the substrate. The structure may be fabricated starting with a bulk semiconductor substrate, without the need for a semiconductor-on-insulator substrate. Fin structures may be formed by epitaxial growth, which can improve the uniformity of fin heights in the devices.
Claims32
A method for making a fin-FET, the method comprising:
- depositing a first layer comprising sacrificial material on a substrate;
- depositing a second layer of a first semiconductor material over the first layer;
- forming a plurality of fins for one or more fin-FETs in the second layer;
- and
- removing at least portions of the first layer to form first voids under the plurality of fins.
A fin-FET structure comprising a plurality of fins formed for a plurality of fin-FETs, wherein first portions of the plurality of fins that are over voids between the plurality of fins and a substrate are supported by a support structure adjacent the first portions.
Dependencies are inferred from the claim text.