Semiconductor device

A semiconductor device comprising:

• a pillar-shaped semiconductor;
• a first insulator surrounding the pillar-shaped semiconductor;
• a first metal surrounding a portion of the first insulator at a first end of the pillar-shaped semiconductor;
• a second metal surrounding a portion of the first insulator at a second end of the pillar-shaped semiconductor;
• a third metal surrounding a portion of the first insulator in a region sandwiched between the first metal and the second metal;
• a second insulator between the first metal and the third metal;
• a third insulator between the second metal and the third metal;
• a fourth metal connecting the first metal and the first end of the pillar-shaped semiconductor;
• and
• a fifth metal connecting the second metal and a second end of the pillar-shaped semiconductor.

A semiconductor device comprising:

• a pillar-shaped semiconductor;
• a first insulator surrounding a portion of the pillar-shaped semiconductor at end of the pillar-shaped semiconductor;
• a first metal surrounding the first insulator;
• a fourth insulator surrounding a portion of the pillar-shaped semiconductor at the end of the pillar-shaped semiconductor;
• a second metal surrounding the fourth insulator;
• a fifth insulator surrounding a portion of the pillar-shaped semiconductor in a region sandwiched between the first metal and the second metal;
• a third metal surrounding the fifth insulator;
• a second insulator between the first metal and the third metal;
• a third insulator between the second metal and the third metal;
• a fourth metal connecting the first metal and the one end of the pillar-shaped semiconductor;
• and
• a fifth metal connecting the second metal and the other end of the pillar-shaped semiconductor.

A semiconductor device comprising:

• a pillar-shaped semiconductor;
• a first insulator surrounding at least a part of a portion of the pillar-shaped semiconductor at one end of the pillar-shaped semiconductor;
• a first metal surrounding at least a part of the first insulator;
• a fourth insulator surrounding at least a part of a portion of the pillar-shaped semiconductor at the end of the pillar-shaped semiconductor;
• a second metal surrounding at least a part of the fourth insulator;
• a fifth insulator surrounding at least a part of a portion of the pillar-shaped semiconductor in a region sandwiched between the first metal and the second metal;
• a third metal surrounding at least a part of the fifth insulator;
• a second insulator between the first metal and the third metal;
• a third insulator between the second metal and the third metal;
• a fourth metal connecting the first metal and the first end of the pillar-shaped semiconductor;
• and
• a fifth metal connecting the second metal and the second end of the pillar-shaped semiconductor.