Thin film transistor
AssigneesHon Hai Precision Industry Co., Ltd., Tsinghua University
InventorsQING-KAI QIAN, QUN-QING LI
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Abstract
A thin film transistor based on carbon nanotubes includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The semiconductor layer is electrically connected with the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The work-functions of the source electrode and of the drain electrode are different from that of the semiconductor layer, enabling the creation of both p-type and n-type field-effect transistors.
Claims20
A thin film transistor comprising:
- a first insulating layer having a first surface and a second surface, opposite to the first surface;
- a semiconductor layer on the first surface of the first insulating layer;
- a gate electrode on the second surface of the first insulating layer;
- and
- a source electrode on the semiconductor layer, wherein the source electrode comprises a first body and a first extending portion, the first body is attached on the surface of the semiconductor layer, and the first extending portion is insulated from the semiconductor layer;
- a drain electrode on the semiconductor layer, wherein the drain electrode comprises a second body and a second extending portion, the second body is attached on the surface of the semiconductor layer, and the second extending portion is spaced from the semiconductor layer and the first extending portion, and a part of the semiconductor layer, between the first body and the second body, is defined as a channel, and the first extending portion and the second extending portion cover a part of the channel.
A thin film transistor comprising:
- a source electrode;
- a drain electrode spaced apart from the source electrode;
- a semiconducting layer electrically connected to the source electrode and to the drain electrode;
- an insulating layer on the semiconductor layer;
- and
- a gate electrode insulated from the source electrode, the drain electrode, and the semiconducting layer by the insulating layer;
- wherein a first work-function of the source electrode and a second work-function of the drain electrode is the same, and the first work function is different from a third work-function of the semiconducting layer.
Dependencies are inferred from the claim text.