Memory device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKiyoshi KATO, Toshihiko SAITO
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Abstract
It is an object to provide a memory device where an area occupied by a memory cell is small, and moreover, a memory device where an area occupied by a memory cell is small and a data holding period is long. A memory device includes a bit line, a capacitor, a first insulating layer provided over the bit line and including a groove portion, a semiconductor layer, a second insulating layer in contact with the semiconductor layer, and a word line in contact with the second insulating layer. Part of the semiconductor layer is electrically connected to the bit line in a bottom portion of the groove portion, and another part of the semiconductor layer is electrically connected to one electrode of the capacitor in a top surface of the first insulating layer.
Claims19
(canceled)
A semiconductor device comprising:
- an insulator;
- an oxide semiconductor film on a side surface of the insulator;
- a gate insulating film adjacent to the side surface of the insulator;
- a gate electrode adjacent to the oxide semiconductor film;
- a first electrode in contact with the oxide semiconductor film at a first level;
- and
- a second electrode in contact with the oxide semiconductor film at a second level that is higher than the first level,
- wherein the oxide semiconductor film is provided between the insulator and the gate insulating film,
- wherein the gate insulating film is provided between the gate electrode and the oxide semiconductor film, and
- wherein the oxide semiconductor film comprises indium, tin, and zinc.
A semiconductor device comprising a transistor, the transistor comprising:
- a first electrode;
- an oxide semiconductor film on and in contact with the first electrode;
- a second electrode on and in contact with the oxide semiconductor film;
- a gate electrode adjacent to the oxide semiconductor film;
- and
- a gate insulating film between the oxide semiconductor film and a side surface of the gate electrode,
- wherein the oxide semiconductor film comprises indium, tin, and zinc.
Dependencies are inferred from the claim text.