Photoconductor-on-active pixel device

A photoconductor-on-active pixel device comprising:

• a first dielectric layer disposed on an intermediary layer;
• a first capping layer disposed on first dielectric layer;
• a first conductive pad portion and a first interconnect portion disposed on the first capping layer;
• a second dielectric layer disposed on the first dielectric layer;
• an n-type doped silicon layer disposed on the second dielectric layer, the first conductive pad portion, and the first interconnect portion;
• an intrinsic silicon layer disposed on the n-type doped silicon layer;
• and
• a p-type doped silicon layer disposed on the intrinsic silicon layer.

A design structure embodied in a machine readable medium used in a design process, the design structure comprising:

• a first dielectric layer disposed on an intermediary layer;
• a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer;
• a second dielectric layer disposed on the first dielectric layer;
• a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion;
• a second capping layer disposed on the first capping layer and a portion of the second dielectric layer;
• an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion;
• an intrinsic silicon layer disposed on the n-type doped silicon layer;
• and
• a p-type doped silicon layer disposed on the intrinsic silicon layer.