GERMANIUM PHOTODETECTOR SCHOTTKY CONTACT FOR INTEGRATION WITH CMOS AND Si NANOPHOTONICS

An integrated photonic semiconductor structure comprising:

• a semiconductor substrate;
• a Schottky metal contact;
• a plurality of contacts;
• a dielectric stack having an opening;
• a photodetector device located on the semiconductor substrate, the photodetector device having an active area region encapsulated by the dielectric stack and the Schottky metal contact, the Schottky metal contact located within the opening of the dielectric stack and in direct contact with a portion of the active area region and one of the plurality of contacts;
• and
• a CMOS device located on the semiconductor substrate, the CMOS device coupled to at least one other of the plurality of contacts,
• wherein the Schottky metal contact isolates the portion of active area region from an occurrence of metal intermixing between the one of the plurality of contacts and the portion of the active area region.

A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:

• a semiconductor substrate;
• a semiconductor substrate;
• a Schottky metal contact;
• a plurality of contacts;
• a dielectric stack;
• a photodetector device located on the semiconductor substrate, the photodetector device having an active area region encapsulated by the dielectric stack and the Schottky metal contact, the Schottky metal contact located within the opening of the dielectric and in direct contact with a portion of the active area region and one of the plurality of contacts;
• and
• a CMOS device located on the semiconductor substrate, the CMOS device coupled to at least one other of the plurality of contacts,
• wherein the Schottky metal contact isolates the portion of active area region from an occurrence of metal intermixing between the one of the plurality of contacts and the portion of the active area region.