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US 2014/0209982 A1Published application
Self-aligned well structures for low-noise chemical sensors
AssigneeLife Technologies Corporation
InventorsJonathan PUTNAM, Shifeng LI
Life of this patent
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Abstract
In one implementation, a chemical detection device is described. The device includes a chemically-sensitive field effect transistor including a floating gate conductor coupled to a gate dielectric and having an upper surface, and a sensing material on the upper surface. The device also includes a fill material defining a reaction region extending above the sensing material, the reaction region overlying and substantially aligned with the floating gate conductor.
Claims22
A method for forming a chemical detection device, the method comprising:
- forming a gate dielectric on a semiconductor substrate;
- forming a floating gate structure on the gate dielectric, including:
- forming a conductive material overlying the gate dielectric;
- forming a sacrificial material overlying the conductive material;
- patterning the conductive material and the sacrificial material;
- forming a fill material adjacent to the patterned sacrificial material and the patterned conductive material;
- and
- removing the patterned sacrificial material to define a reaction region substantially aligned with the patterned conductive material.
5 more elements
A chemical detection device, comprising:
- a chemically-sensitive field effect transistor including a floating gate conductor coupled to a gate dielectric and having an upper surface, and a sensing material on the upper surface;
- and
- a fill material defining an reaction region extending above the sensing material, the reaction region overlying and substantially aligned with the floating gate conductor.
Dependencies are inferred from the claim text.