Metamorphic Growth Of III-V Semiconductor On Silicon Substrate By MOCVD for High Speed III-V Transistors

A method for manufacturing a III-V semiconductor device on a silicon substrate, the method comprising:

• preparing a silicon (Si) substrate;
• treating the substrate to form a stable As—Si prelayer on the substrate;
• applying at least one III/V semiconductor layer comprising a layer of gallium arsenide (GaAs);
• applying at least one layer of a second III/V semiconductor material comprising a layer of indium phosphide (InP);
• applying at least one layer of a material having a larger bandgap than said at least one III/V semiconductor layer, the material having a larger bandgap comprising a layer of aluminum indium arsenide (AlInAs), thereby forming a structure of AlInAs over InP over GaAs over Si;
• applying at least one layer of a material having a high electron mobility and small bandgap than said at least one III/V semiconductor layer, the material having a high electron mobility and small bandgap comprising a layer of Gallium indium arsenide (GaInAs), thereby forming a structure of GaInAs over AlInAs over InP over GaAs over Si;
• applying at least one layer of a material having a larger bandgap than said at least one III/V semiconductor layer, the material having a larger bandgap comprising a layer of aluminum indium arsenide (AlInAs), thereby forming a structure of AlInAs over GaInAs over InP over GaAs over Si;
• doping at least a portion of the structure, thereby forming a delta-doped layer at the AlInAs over GaInAs over InP over GaAs over Si;
• applying at least one layer of a material having a larger bandgap than said at least one III/V semiconductor layer, the material having a larger bandgap comprising a layer of aluminum indium arsenide (AlInAs), thereby forming a structure of AlInAs over delta-doped layer over AlInAs over GaInAs over InP over GaAs over Si;
• and
• applying at least one of a cap layer, thereby forming a heavy doped layer of GaInAs over AlInAs, as a contact layer, thereby forming a structure of heavy doped GaInAs over AlInAs over delta-doped layer over AlInAs over GaInAs over InP over GaAs over Si.