Semiconductor device
AssigneeFujitsu Limited
InventorYouichi KAMADA
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a first buffer layer formed on a substrate; a second buffer layer formed on a portion of the first buffer layer; a third buffer layer formed on the first buffer layer and the second buffer layer; a first semiconductor layer formed on the third buffer layer; a second semiconductor layer formed on the first semiconductor layer; and a gate electrode, a source electrode, and a drain electrode that are formed on the second semiconductor layer, wherein the second buffer layer is composed of a material with higher resistivity than the first semiconductor layer; and the second buffer layer is formed in a region immediately below and between the gate electrode and the drain electrode.
Claims17
A semiconductor device comprising:
- a first buffer layer formed on a substrate;
- a second buffer layer formed on a portion of the first buffer layer;
- a third buffer layer formed on the first buffer layer and the second buffer layer;
- a first semiconductor layer formed on the third buffer layer;
- a second semiconductor layer formed on the first semiconductor layer;
- and
- a gate electrode, a source electrode, and a drain electrode that are formed on the second semiconductor layer,
- wherein the second buffer layer is composed of a material with higher resistivity than the first semiconductor layer;
- and
- the second buffer layer is formed in a region immediately below and between the gate electrode and the drain electrode.
A semiconductor device comprising:
- a first buffer layer formed on a substrate;
- a second buffer layer formed on a portion of the first buffer layer;
- a third buffer layer formed to cover the second buffer layer;
- a first semiconductor layer formed on the first buffer layer and the third buffer layer;
- a second semiconductor layer formed on the first semiconductor layer;
- and
- a gate electrode, a source electrode, and a drain electrode that are formed on the second semiconductor layer,
- wherein the second buffer layer is composed of a material with higher resistivity than the first semiconductor layer;
- and
- the second buffer layer is formed in a region immediately below and between the gate electrode and the drain electrode.
Dependencies are inferred from the claim text.