Double Stepped Semiconductor Substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Ku Chen, Hung-Ta Lin, Huicheng Chang
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Abstract
A method for forming a double step surface on a semiconductor substrate includes, with an etching process used in a Metal-Organic Chemical Vapor Deposition (MOCVD) process, forming a rough surface on a region of a semiconductor substrate. The method further includes, with an annealing process used in the MOCVD process, forming double stepped surface on the region of the semiconductor substrate.
Claims20
A method for forming a double step surface on a semiconductor substrate, the method comprising:
- with an etching process used in a Metal-Organic Chemical Vapor Deposition (MOCVD) process, forming a rough surface on a region of a semiconductor substrate;
- with an annealing process used in the MOCVD process, forming double stepped surface on the region of the semiconductor substrate.
A semiconductor substrate comprising:
- an off-cut region formed through an etching process used in a Metal-Organic Chemical Vapor Deposition (MOCVD) process;
- and
- a double stepped region formed within the off-cut region, the double stepped region being formed through an annealing process used in the MOCVD process and in the same chamber as the MOCVD process.
A method for forming a double step surface on a semiconductor substrate, the method comprising:
- with a Hydrogen Chloride (HCl) etching process used in situ with a Metal-Organic Chemical Vapor Deposition (MOCVD) process, forming an off-cut surface on a region of a semiconductor substrate;
- with an annealing process used in situ with the MOCVD process, forming double stepped surface on the region of the semiconductor substrate;
- and
- forming a III-V semiconductor layer onto the double stepped region with the MOCVD process;
- wherein the double stepped region is such that there are fewer anti-phase boundary (APB) defects formed into the III-V semiconductor layer.
Dependencies are inferred from the claim text.