Insulated gate bipolar transistor

An insulated gate bipolar transistor IGBT, comprising:

• a cell region on a front surface;
• a terminal region surrounding the cell region;
• an IGBT drift region of a first conductivity type;
• and
• an IGBT collector region on a back surface, wherein:
• the IGBT collector region is connected to the IGBT drift region and under the IGBT drift region, and the IGBT drift region comprises a first drift region under the cell region and a second drift region under the terminal region;
• and
• the IGBT collector region comprises a cell collector region of a heavily doped second conductivity type under the first drift region and a non-conductive isolation region adjacent to the cell collector region, wherein a length of the non-conductive isolation region is smaller than or equal to a length of the terminal region, and a thickness of the non-conductive isolation region is larger than or equal to a thickness of the cell collector region.