Light emitting device, light emitting device package, and lighting system

A light emitting device comprising:

• a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer under the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
• and
• an electrode connected to the first conductive type semiconductor layer;
• a first conductive support member disposed under the light emitting structure;
• a conductive contact layer disposed between the second conductive type semiconductor layer and the first conductive support member;
• plurality of metal layers disposed between the conductive contact layer and the first conductive support member;
• and
• a second conductive support member disposed under the first conductive support member,
• wherein the second conductive support member comprises a different material from the first conductive support member,
• wherein the second conductive support member has a thermal conductivity higher than that of the first conductive support member,
• wherein the second conductive support member has a thickness smaller than a thickness of the first conductive support member, wherein the second conductive support member is located at a lower position than a position of the first conductive support member,
• wherein the first conductive support member is formed of a metal layer,
• wherein the first conductive type semiconductor layer includes an n-type dopant, and
• wherein the second conductive type semiconductor layer includes a p-type dopant.

A light emitting device comprising:

• a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer under the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
• and
• an electrode connected to the first conductive type semiconductor layer;
• a first conductive support member disposed under the light emitting structure;
• a conductive contact layer disposed between the second conductive type semiconductor layer and the first conductive support member;
• plurality of metal layers disposed between the conductive contact layer and the first conductive support member;
• and
• a second conductive support member disposed under the first conductive support member,
• wherein the second conductive support member comprises a different material from the first conductive support member,
• wherein the second conductive support member has a thermal conductivity higher than that of the first conductive support member,
• wherein the second conductive support member has a thickness smaller than a thickness of the first conductive support member,
• wherein the second conductive support member is located at a lower position than a position of the first conductive support member,
• wherein the first conductive support member is formed of a carrier wafer doped with a dopant, and
• wherein the second conductive support member comprises a carbon-based material.