Light emitting device
AssigneeLG Innotek Co., Ltd.
InventorsBumDoo PARK, SonKyo HWAN, TaeJin KIM
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Abstract
Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a second electrode layer electrically connected to the second semiconductor layer, and an anti-crack layer disposed on a boundary on which the light emitting structure is segmented on a chip basis, wherein the anti-crack layer is disposed under the light emitting structure and includes a metal material contacting the light emitting structure.
Claims20
A light emitting device comprising:
- a conductive substrate;
- a first electrode layer disposed on the conductive substrate;
- a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;
- a second electrode layer electrically connected to the second semiconductor layer;
- and
- an anti-crack layer disposed on a boundary on which the light emitting structure is segmented on a chip basis,
- wherein the anti-crack layer is disposed under the light emitting structure and comprises a metal material contacting the light emitting structure.
A light emitting device comprising:
- a conductive substrate;
- a first electrode layer disposed on the conductive substrate;
- a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;
- a second electrode layer electrically connected to the second semiconductor layer;
- and
- an anti-crack layer disposed on a boundary on which the light emitting structure is segmented on a chip basis,
- wherein the anti-crack layer is disposed under the light emitting structure and comprises a metal material contacting the light emitting structure, and
- the first electrode layer comprises:
- a transparent electrode layer disposed between the conductive substrate and the first semiconductor layer;
- and
- an ohmic layer comprising a plurality of metal contact portions passing through the transparent electrode layer,
- wherein each metal contact portion comprises AuBe.
A light emitting device package comprising a light emitting device,
- wherein the light emitting device comprises:
- a conductive substrate;
- a first electrode layer disposed on the conductive substrate;
- a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;
- a second electrode layer electrically connected to the second semiconductor layer;
- and
- an anti-crack layer disposed on a boundary on which the light emitting structure is segmented on a chip basis,
- wherein the anti-crack layer is disposed under the light emitting structure and comprises a metal material contacting the light emitting structure.
Dependencies are inferred from the claim text.