Semiconductor light emitting devices

A semiconductor light emitting device comprising:

• a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
• a first electrode,
• connected to the first conductivity-type semiconductor layer,
• penetrating the second conductivity-type semiconductor layer and the active layer, and
• having a conductive via, the conductive via including a columnar structure formed in the conductive via;
• and
• a second electrode connected to the second conductivity-type semiconductor layer.

A semiconductor light emitting device comprising:

• a light emitting structure including a first layer includes at least one recessed portion, a second layer and a third layer;
• at least one protruding structure protruding from the at least one recessed portion, the at least one protruding structure including a sequential stack of a portion of the first layer, the third layer and the second layer;
• a first electrode disposed on the at least one recessed portion of the first layer;
• and
• a second electrode disposed on at least a portion of the second layer.