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US 2014/0209927 A1Published application
Semiconductor device and method for manufacturing same and semiconductor substrate
AssigneeKabushiki Kaisha Toshiba
InventorsJohji NISHIO, Tatsuo SHIMIZU, Chiharu OTA, Takashi SHINOHE
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Abstract
According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type made of silicon carbide; and a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element.
Claims20
A semiconductor device comprising:
- a first semiconductor layer of a first conductivity type made of silicon carbide;
- and
- a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element.
A method for manufacturing a semiconductor device, comprising:
- implanting an electrically inactive element into an upper portion of a substrate made of silicon carbide and including a lower portion and the upper portion, the lower portion containing at least one of an impurity serving as a donor and an impurity serving as an acceptor, and the upper portion containing at least the other of the impurity serving as the donor and the impurity serving as the acceptor;
- and
- turning the lower portion to a first conductivity type and the upper portion to a second conductivity type by performing heat treatment on the substrate to activate the impurity serving as the donor and the impurity serving as the acceptor.
A semiconductor substrate comprising:
- a first semiconductor layer of a first conductivity type made of silicon carbide;
- and
- a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element.
Dependencies are inferred from the claim text.