Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsKazuki OTA, Yuji ANDO
Life of this patent
Estimating the term…
Abstract
A high electron mobility transistor having a channel layer, electron supply layer, source electrode, and drain electrode is included so as to have a cap layer formed on the electron supply layer between the source and drain electrodes and having an inclined side surface, an insulating film having an opening portion on the upper surface of the cap layer and covering the side surface thereof, and a gate electrode is formed in the opening portion and extending, via the insulating film, over the side surface of the cap layer on the drain electrode side. The gate electrode having an overhang on the drain electrode side can reduce the peak electric field.
Claims20
A semiconductor device having a field effect transistor, comprising:
- a channel layer having a first nitride semiconductor layer,
- an electron supply layer formed over the channel layer and having a second nitride semiconductor layer having a band gap different from that of the first nitride semiconductor layer,
- a source electrode formed over the electron supply layer,
- a drain electrode formed over the electron supply layer while being separated from the source electrode,
- a cap layer having a p type semiconductor layer, formed over the electron supply layer between the source electrode and the drain electrode, and having an inclined side surface,
- an insulating film having an opening on the upper surface of the cap layer and covering the side surface of the cap layer, and
- a gate electrode formed in the opening portion and extending over the side surface of the cap layer on the side of the drain electrode via the insulating film.
A semiconductor device having a field effect transistor, comprising:
- a channel layer having a first nitride semiconductor layer,
- an electron supply layer formed over the channel layer and having a second nitride semiconductor layer having a band gap different from that of the first nitride semiconductor layer,
- a source electrode formed over the electron supply layer,
- a drain electrode formed over the electron supply layer while being separated from the source electrode,
- a cap layer having a p type semiconductor layer, formed over the electron supply layer between the source electrode and the drain electrode, and having an inclined side surface,
- a first gate electrode portion formed over the upper surface of the cap layer,
- an insulating film having an opening portion over the upper surface of the first gate electrode portion and covering the side surface of the cap layer, and
- a second gate electrode portion formed in the opening portion and extending, via the insulating film, over the side surface of the cap layer on the side of the drain electrode.
A semiconductor device having a field effect transistor, comprising:
- a channel layer having a first nitride semiconductor layer,
- an electron supply layer formed over the channel layer and having a second nitride semiconductor layer having a band gap different from that of the first nitride semiconductor layer,
- a source electrode formed over the electron supply layer,
- a drain electrode formed over the electron supply layer while being separated from the source electrode,
- a cap layer having a p type semiconductor layer and formed over the electron supply layer between the source electrode and the drain electrode,
- a first gate electrode portion formed over the upper surface of the cap layer, and
- a second gate electrode portion extending via the insulating film while covering from the upper portion of the cap layer on the side of the drain electrode to the side surface of the cap layer, and electrically coupled to the first gate electrode portion.
Dependencies are inferred from the claim text.