Method of implanting dopants into a group iii-nitride structure and device formed
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHan-Chin CHIU, Chen-Hao CHIANG, Chi-Ming CHEN, Chung-Yi YU
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Abstract
A method including forming a III-V compound layer on a substrate and implanting a main dopant in the III-V compound layer to form source and drain regions. The method further includes implanting a group V species into the source and drain regions. A semiconductor device including a substrate and a III-V compound layer over the substrate. The semiconductor device further includes source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopant and a second dopant, and the second dopant comprises a group V material.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a III-V compound layer on a substrate;
- implanting a main dopant into the III-V compound layer to form source and drain regions;
- and
- implanting a group V species within the source and drain regions.
A semiconductor device comprising:
- a substrate;
- a III-V compound layer over the substrate;
- source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopant and a second dopant, and the second dopant comprises a group V material, wherein a ratio of the first dopant to the second dopant ranging from about 1,000:1 to about 10:1.
A method of forming a semiconductor device, the method comprising:
- forming a group III-nitride compound layer over a substrate;
- forming a passivation layer over the group III-nitride compound layer;
- implanting a main dopant in the group III-nitride compound layer to form source and drain regions;
- implanting a group V species in the source and drain regions;
- activating the source and drain regions;
- forming a capping layer over the source and drain regions;
- and
- forming a gate structure over the group III-nitride compound layer.
Dependencies are inferred from the claim text.